GRC addresses the critical challenges on the International Technology Roadmap for Semiconductors (ITRS), delivering the solutions that sustain Moore's Law.
FCRP focuses on carrying CMOS to its ultimate limits and beyond, keeping the United States and its industries at the forefront of technology.
The focus of NRI is to demonstrate novel computing devices capable of replacing the CMOS transistor as a logic switch in the 2020 timeframe.
TRCs create research opportunities among the semiconductor industry and other sectors. This innovative applications research, for SRC members and non-members, currently includes the following three areas:
bioelectronics, energy & nanoengineering.
The Alliance, a private foundation, supports a diversity of students at various levels of education in industry-related research, encouraging them to pursue a future in science and engineering.
Next-Generation DRAM Developed by Yale University in Connection With Semiconductor Research CorporationFirst-of-its-Kind Research Produces New Cell That Could Extend DRAM and Improve Performance and Scalability RESEARCH TRIANGLE PARK, N.C. - Aug. 11, 2009 - Semiconductor Research Corporation (SRC), the world's leading university-research consortium for semiconductors and related technologies, and Yale University researchers today announced they have developed a new DRAM cell using ferroelectric layers that could significantly increase the technological and market competitiveness for DRAM technology. According to early findings, researchers have found a way to apply ferroelectric material to a DRAM cell, which eliminates the need for a storage capacitor found in conventional DRAM. Ferroelectric DRAM (FeDRAM) is a capacitor-less DRAM cell, with a cell structure very similar to a CMOS transistor, except that the gate dielectric is ferroelectric. Compared to the conventional DRAM cell, FeDRAM offers simpler cell structure, improved scalability, a smaller cell size, orders of magnitude longer retention time, lower power consumption and the possibility of storing multi-bits per cell. Storing many bits of information in a single DRAM cell has not been done and is found primarily only in flash memories. "There have been numerous research groups that have worked on similar ferroelectric device structures for non-volatile memory applications, but we believe this is the first innovative FeDRAM solution to an industry-wide problem," said Professor T. P. Ma, Raymond John Wean Professor of Electrical Engineering at Yale University. "If we are able to show through further research that FeDRAM indeed possesses the superb properties that we are seeing now, these advancements would produce meaningful cost and performance benefits to global DRAM makers and their customers." Reducing Costs, Increasing Competitiveness "One key advantage of FeDRAM is its ability to scale," said Kwok Ng, Director of Device Sciences at SRC. "Existing DRAM technology is not highly scalable due to its difficulty in maintaining an acceptable storage capacitance while reducing footprint. However, we see the potential for greater scalability with FeDRAM, extending the benefits well into the future." Researchers now are working toward being able to demonstrate FeDRAM cells, simple building block circuits and pathways for scaling. They believe that with SRC support and collaboration with other SRC member companies, FeDRAM will be ready to transfer to the industry for production in the foreseeable future. About SRC MEDIA CONTACT: |