Overview

Device Sciences (DS) seeks to be a premier source to our members of scientific understanding and knowledge, new concepts and technologies, and highly skilled graduate leading to successful commercialization of differentiated semiconductor-related products. DS delivers value to GRC's member companies and seeks to educate highly qualified students who possess the necessary skills to support the industry.

Research Focus

The research in DS is organized into six technical thrust areas:

DIGITAL CMOS TECHNOLOGIES

Digital CMOS Technologies focuses on programs that address advanced device structures and front-end processes to extend CMOS technology to and beyond the 22-nm technology node. These technologies include: a. Strained Si and SiGe materials for high-mobility channels b. III-V MOSFETs on Si substrate c. New technologies related to ultra-thin body SOI d. Advanced gate stack technologies including high-K gate dielectrics, metal gate electrodes, and related metrologies e. Nonplanar multiple-gate MOSFETs

ANALOG AND MIXED-SIGNAL DEVICES

Analog and Mixed-Signal Devices focuses on programs that address scaling of CMOS and SiGe HBT technologies beyond the 130-nm technology node for analog and system-on-the-chip applications.

MEMORY TECHNOLOGIES

Memory Technologies explores new device ideas and technologies, including nonvolative, DRAM and SRAM, to identify viable alternatives to sustain the historical growth of information processing beyond the end of CMOS scaling.

DEVICE SCIENCES MODELING AND SIMULATION

Device Sciences Modeling and Simulation explores and develops new modeling and simulation tools addressing scaling of CMOS devices to and beyond the 22-nm technology node, together with enabling scientific understanding of new materials and process technologies.

COMPACT MODELING

Compact Modeling focuses on programs that address development of new compact models for MOSFET and other structures suitable for use in commercial design simulators and tools for advanced digital and high-frequency analog devices.

NON-CLASSICAL CMOS RESEARCH

Non-classical CMOS Research focuses on the part of digital CMOS technologies that utilizes alternate channel materials to Si, but still based on the same MOSFET operation principle. The main advantages are related to the superior transport properties that enable higher drive current and/or lower voltage. It is also anticipated that the new technology is compatible with conventional Si technology, and that the devices will be built on Si wafers.

Science Area Management

Science Area Director

Kwok Ng

Coordinating Committee 

The Design Sciences SACC works with the Science Area Director to develop the annual Strategic and Operations Plans, solicit and evaluate university research proposals based on needs documents developed by member task forces, conduct periodic reviews of sponsored university research, and sponsor technical reviews and transfer courses for members and university participants.

Technical Advisory Boards

TABs in Digital CMOS Technologies, Analog and Mixed-Signal Devices; Memory Technologies, Modeling and Simulation, and Compact Modeling assist in solicitations and evaluating work in these areas.