• Monday 12-Sep-2016 2:10 - 3:25 PM Pecos
  • Session 12 - Tunneling Devices I
  • 12.1 2:10 PM NRI
  • Compact Model of the ME-MTJ Device and Its Derived Structures for Logic and Memory
    Nishtha Gaul (UT/Dallas)
  • 12.2 2:25 PM GRC
  • Modeling of Non-idealities to Predict Performance Limits of Tunnel Field Effect Transistors
    Redwan N. Sajjad (MIT)
  • 12.3 2:40 PM STARnet
  • 2D Crystal Tunnel FETs
    Sara Fathipour (Univ. of Notre Dame)
  • 12.4 2:55 PM NRI
  • Performance Factors for Interlayer Tunnel FETs Based on Layered Graphene-Hexagonal Boron Nitride Heterostructures
    Sangwoo Kang (UT/Austin)
  • 12.5 3:10 PM NRI
  • Full-Band Simulations of Single-Particle Resonant Tunneling in Transition Metal Dichalcogenide-Based Interlayer Tunneling Field-Effect Transistors
    Xian Wu (UT/Austin)

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

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