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P1824

Issued

nCORE

Converting Ta- and Ti-Based Cu Diffusion Barriers into their sp2 Bond Based 2D Materials to Enhance Diffusion Barrier Properties with Atomically-thin Thickness

Zhihong Chen (Purdue); Chun-Li Lo (Purdue)
Patent Issued (on 29-Mar-2022)
Application Type: Utility

P1872

Issued

nCORE

Multiferroic Heterostructures

John T. Heron (Univ. of Michigan); Peter Meisenheimer (Univ. of Michigan); Darrell G. Schlom (Cornell); Rachel Steinhardt (Cornell)
Patent Issued (on 15-Mar-2022)
Application Type: Utility

P1912

Issued

nCORE

Valley Spin Hall Effect Based Non-Volatile Memory

Zhihong Chen (Purdue); Sumeet K. Gupta (Purdue); Sandeep Krishna Thirumala (Purdue)
Patent Issued (on 15-Feb-2022)
Application Type: Utility

P1974

Published by PTO

nCORE

Advanced Precursors for Selective Atomic Layer Deposition using Self-Assembled Monolayers

Stacey F. Bent (Stanford); Ilkwon Oh (Stanford)
Published by Patent Office
Application Type: Utility

P2024

Published by PTO

nCORE

Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased Peak-to-Valley Current Ratio (PVCR)

Joerg Appenzeller (Purdue); Peng Wu (Purdue)
Published by Patent Office
Application Type: Utility

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Converting Ta- and Ti-Based Cu Diffusion Barriers into their sp2 Bond Based 2D Materials to Enhance Diffusion Barrier Properties with Atomically-thin Thickness

Multiferroic Heterostructures

Valley Spin Hall Effect Based Non-Volatile Memory

Advanced Precursors for Selective Atomic Layer Deposition using Self-Assembled Monolayers

Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased Peak-to-Valley Current Ratio (PVCR)

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