Fabrication of Group III-Nitride Photocathode Having Cs Activation Layer

    • Application Type:
      Continuation (in part)
      Patent Number:
      7455565
      Country:
      United States
      Status:
      Filed on 16-Mar-2006, Issued on 25-Nov-2008, Patent Abandoned
      Organization:
      Stanford University
      SRC Filing ID:
      P1082

    Inventor

    • Francisco Machuca (Stanford)

    Related Patents

    P0614
    Abandoned Application
    GRC

    Group III-Nitride Photocathode Having Cs Activation Layer

    Francisco Machuca (Stanford)
    Patent Application Abandoned
    Application Type: Utility

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