Tunneling Field-Effect Transistor with Low Leakage Current

• Application Type:

  Utility

  Patent Number:

  8309989

  Country:

  United States

  Status:

  Filed on 18-Aug-2010, Issued on 13-Nov-2012, Patent Abandoned

  Organization:

  Purdue University

  SRC Filing ID:

  P1210

Inventors

• Mathieu Luisier (Purdue)
• Samarth Agarwal (Purdue)
• Gerhard Klimeck (Purdue)