Spin Transistor Having Multiferroic Gate Dielectric

    • Application Type:
      Utility
      Patent Number:
      8860006
      Country:
      United States
      Status:
      Filed on 25-Mar-2011, Issued on 14-Oct-2014
      Organization:
      University of California/Los Angeles
      SRC Filing ID:
      P1282

    Inventors

    • Kang L. Wang (UCLA)
    • Ajey P. Jacob (Intel)
    • Faxian Xiu (UCLA)

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    Application Type: Provisional

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