Methods of Forming Graphene Single Crystal Domains on a Low Nucleation Site Density Substrate

• Application Type:

  Utility

  Patent Number:

  10072355

  Country:

  United States

  Status:

  Filed on 15-Apr-2014, Issued on 11-Sep-2018

  Organization:

  University of Texas at Austin

  SRC Filing ID:

  P1436

Inventors

• Luigi Colombo (TI)
• Rodney S. Ruoff (UT/Austin)
• Yufeng Hao (UT/Austin)