GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANSISTORS AND METHODS FOR MAKING THE SAME
Inventors
- Patrick Fay (Univ. of Notre Dame)
- Wenjun Li (Univ. of Notre Dame)
- Debdeep Jena (Univ. of Notre Dame)
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III-N Heterojunction nanowire tunneling field effect transistors
Patrick Fay (Univ. of Notre Dame); Debdeep Jena (Univ. of Notre Dame); Wenjun Li (Univ. of Notre Dame)Patent Issued (on 24-Apr-2018)
Application Type: Continuation