Phase Transition Based Resistive Random-Access Memory
Inventors
- Joerg Appenzeller (Purdue)
- Feng Zhang (Purdue)
Related Patents
Phased Transition Based Resistive Random-Access Memory
Joerg Appenzeller (Purdue); Feng Zhang (Purdue)Patent Issued (on 10-Dec-2019)
Application Type: Utility
Phase Transition Based Resistive Random-Access Memory
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Application Type: Continuation