Characterizing the Switching Phenomena of the Metal Insulator Transition Material VO(2)

  • Authors:
    Mehdi Z. Sadi (Univ. of Virginia), Salinporn Kittiwatanakul (Univ. of Virginia), Jiwei Lu (Univ. of Virginia), Stuart Wolf (Univ. of Virginia), Mircea R. Stan (Univ. of Virginia), Percy B. (Univ. of Virginia), Weikle R. (Univ. of Virginia)
    Publication ID:
    P064463
    Publication Type:
    Presentation
    Received Date:
    22-Aug-2012
    Last Edit Date:
    1-Oct-2012
    Research:
    2115.001 (University of Virginia)

Abstract

Vanadium dioxide (VO(2)), which exhibits Metal Insulator transition (MIT), is a suitable material for making novel ultra low power switches. The MIT can be triggered by thermal or electronic stimulus. In case of thermal triggering, at a critical temperature of 340K, the VO(2) samples undergo MIT where the resistance changes by 3 to 4 orders of magnitude. In the interest of making low power ultrafast switches, the triggering needs to be electronic. According to Mot's theory, a critical carrier density inside the VO(2) film will break the Coulomb blockade and the sample would exhibit MIT. In this research, the researchers are exploring the possibility of electronically switching the VO(2) sample. Their experiments show the samples undergo MIT at a certain critical voltage. They report on ohmic behavior of the contacts. They present an analytical thermal model of the VO(2) switch that can correlate the coupling effect between electronic and thermal switching.

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