Topological Insulator States in a Broken-gap GaN/InN/GaN Heterojunction

  • Authors:
    Parijat Sengupta (Purdue), Yaohua Tan (Purdue), Tillmann C. Kubis (Purdue), Gerhard Klimeck (Purdue)
    Publication ID:
    P067848
    Publication Type:
    Poster
    Received Date:
    29-Aug-2013
    Last Edit Date:
    5-Sep-2013
    Research:
    1806.005 (University of Notre Dame)

Abstract

Topological insulator state is obtained by using the strong internal polarization field of nitrides in wurtzite phase. A GaN/InN/GaN system is used here. Spin polarization is computed.

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