Topological Insulator States in a Broken-gap GaN/InN/GaN Heterojunction
Topological insulator state is obtained by using the strong internal polarization field of nitrides in wurtzite phase. A GaN/InN/GaN system is used here. Spin polarization is computed.
Monday, Sept. 9, 2013, 8 a.m. — Tuesday, Sept. 10, 2013, 10 p.m. CT
Austin, TX, United States
Technical conference and networking event for SRC members and students.