Channel Transmission Characteristics of Silicon Nanotransistors
The drain and gate voltage dependent channel transmission, T(VGS,VDS), plays a key role in determining the IV characteristics of nanoscale field-effect transistors. In this paper, we report measurements of T(VGS,VDS) for n-channel Extremely Thin Silicon-On-Insulator (ETSOI) MOSFETs with channel lengths from 30 to 980 nm. The results confirm previously given estimates of T for low and high drain bias. In addition, they also provide a complete description over the range of biases of interest. The results also show that for a given technology, the shape of T(VGS,VDS) is independent of the channel length.
Sunday, Sept. 20, 2015, 8 a.m. — Tuesday, Sept. 22, 2015, 10 p.m. CT
Austin, TX, United States
Technical conference and networking event for SRC members and students.