Tin Metal ALD Using a SnCl(4) with a Silyl Pyrazine Vapor-Phase Reducing Agent

  • Authors:
    Eric Stevens (NC State), Moataz Bellah M. Mousa (NC State), Gregory Parsons (NC State)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2401.001 (North Carolina State University)


We investigated the use of 1,4-bis(trimethylsilyl)-1,4-dihydropyrazine (abbreviated as DHP) chemical as a potential co-reactant for reducing metal-based precursors with highly negative standard reduction potentials (e.g. ≤-1.0 eV). Tin metal was deposited using atomic layer deposition below its melting point (~232 °C) using SnCl4 and DHP. The key properties of an ALD process were confirmed including self-limiting reactions, surface saturation and temperature window. The linear mass uptake of ~ 200ng/cm2/cyc was observed using quartz crystal microbalance (QCM) for temperatures between 170-210 oC. Furthermore, the underlying chemistry was studied using QCM and quadrupole mass spectrometer (QMS) and a tentative reaction mechanism, under further investigation, was suggested. Understanding the surface reaction and growth mechanisms of depositing Tin metal using DHP will open the door for the deposition of new thin film metals of high negative reduction potentials using an ALD process.

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