CVD Growth and Characterization of TMD Materials on Patterned and Non-Patterned Substrates

  • Authors:
    Sahar Naghibi Alvillar (UC/Riverside), Brandon N. Davis (UC/Riverside), Ariana E. Nguyen (UC/Riverside), Velveth Klee (UC/Riverside), I-Hsi D. Lu (UC/Riverside), Edwin Preciado (UC/Riverside), David Barroso (UC/Riverside), Aimee Martinez (UC/Riverside), Paulo Fonseca (UC/Riverside), Ludwig Bartels (UC/Riverside)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2381.002 (University of California/Riverside)


Two-dimensional transition metal dichalcogenides (TMDs) are promising new materials because of their direct-bandgap and semiconducting capabilities present at the monolayer limit. Through chemical vapor deposition (CVD) I am able to synthesize monolayer MoS(2) onto patterned and non-patterned SiO(2) substrates. This method yields single domain "islands" and continuous films, which range from µm to cm scale growth. Through the use of pillared substrates, the transistor channel-length is defined independent of the lithographic lateral resolution. These CVD growth methods of MoS(2) on the vertical sidewalls of micron- and nano-scale pillars fabricated out of SiO(2) is possible. Optical characterization with Raman and photoluminescence spectroscopy verify single-layer growth of MoS(2) on and off the pillared substrate, leading to the possibility for preliminary transport measurements of pristine MoS(2).

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