CVD Growth and Characterization of TMD Materials on Patterned and Non-Patterned Substrates

  • Authors:
    Sahar Naghibi Alvillar (UC/Riverside), Brandon N. Davis (UC/Riverside), Ariana E. Nguyen (UC/Riverside), Velveth Klee (UC/Riverside), I-Hsi D. Lu (UC/Riverside), Edwin Preciado (UC/Riverside), David Barroso (UC/Riverside), Aimee Martinez (UC/Riverside), Paulo Fonseca (UC/Riverside), Ludwig Bartels (UC/Riverside)
    Publication ID:
    P084738
    Publication Type:
    Poster
    Received Date:
    20-Jul-2015
    Last Edit Date:
    16-Sep-2015
    Research:
    2381.002 (University of California/Riverside)

Abstract

Two-dimensional transition metal dichalcogenides (TMDs) are promising new materials because of their direct-bandgap and semiconducting capabilities present at the monolayer limit. Through chemical vapor deposition (CVD) I am able to synthesize monolayer MoS(2) onto patterned and non-patterned SiO(2) substrates. This method yields single domain "islands" and continuous films, which range from µm to cm scale growth. Through the use of pillared substrates, the transistor channel-length is defined independent of the lithographic lateral resolution. These CVD growth methods of MoS(2) on the vertical sidewalls of micron- and nano-scale pillars fabricated out of SiO(2) is possible. Optical characterization with Raman and photoluminescence spectroscopy verify single-layer growth of MoS(2) on and off the pillared substrate, leading to the possibility for preliminary transport measurements of pristine MoS(2).

Past Events

  Event Summary
20–22 September 2015
SRC
SRC
TECHCON 2015
Sunday, Sept. 20, 2015, 8 a.m. — Tuesday, Sept. 22, 2015, 10 p.m. CT
Austin, TX, United States
Technical conference and networking event for SRC members and students.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450