Channel Transmission Characteristics of Silicon Nanotransistors

  • Authors:
    Xingshu Sun (Purdue), Mark S. Lundstrom (Purdue)
    Publication ID:
    P085322
    Publication Type:
    Presentation
    Received Date:
    3-Sep-2015
    Last Edit Date:
    22-Sep-2015
    Research:
    2436.001 (Purdue University)

Abstract

The drain and gate voltage dependent channel transmission,T(VGS,VDS), plays a key role in determining the IVcharacteristics of nanoscale field-effect transistors. In this paper, we report measurements of T(VGS,VDS) for n-channel Extremely Thin Silicon-On-Insulator (ETSOI) MOSFETs with channel lengths from 30 to 980 nm. The results confirm previously given estimates of T for low and high drain bias. In addition, they also provide a complete description over the range of biases of interest. The results also show that for a given technology, the shape of T(VGS,VDS) is independent of the channel length.

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