Exploring Nanoscale InGaAs and Si FinFETs using Quantum-corrected Semi-classical Monte Carlo

  • Authors:
    Dax M. Crum (UT/Austin), Amithraj Valsaraj (UT/Austin), Leonard F. Register (UT/Austin), Sanjay K. Banerjee (UT/Austin), Bhagawan Sahu (GLOBALFOUNDRIES), Zoran Krivokapic (GLOBALFOUNDRIES)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2452.001 (University of Texas/Austin)


Continued demand for faster, denser, and lower power electronics has driven MOSFET design to the limits of what can be achieved through device scaling alone. Nonconventional geometries are being used, while nonconventional materials are being explored. One potential design space is nano-scale tri-gate FinFETs using III-V channel materials. FinFETs increase gate control and reduce short-channel effects, while III-V materials provide faster carriers than Si. To explore this design space, we have developed a 3D semi-classical ensemble Monte Carlo simulator with advanced quantum corrections. We model nano-scale tri-gate FinFETs with channels of In0.53Ga0.47As, which is lattice-matched to industry-friendly InP. In0.53Ga0.47As-channel MOSFETS are compared to Si-channel devices, which have slower bulk carriers but also weaker quantum confinement and higher (better) quantum capacitance. We show that in III-V materials, larger bulk thermal velocities do not necessarily translate into better device performance, where degeneracy and quantum-confinement can dominate device operation.

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20–22 September 2015
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