MoS(2) as the Top Electrode for Ferroelectric Tunnel Junction

  • Authors:
    Tao Li (U Nebraska/Lincoln), Alexey Lipatov (U Nebraska/Lincoln), Pankaj K. Sharma (U Nebraska/Lincoln), Alexander Sinitskii (U Nebraska/Lincoln), Chang-Beom Eom (U of Wisconsin/Madison), Alexei Gruverman (U Nebraska/Lincoln), Hyungwoo Lee (U of Wisconsin/Madison)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2398.002 (University of Nebraska/Lincoln)


Unlike graphene, molybdenum disulfide (MoS2) is a 2-dimentional layered semiconductor with non-zero and tunable band gap. Its rich electronic and optical properties promote many applications, such as transistors, photovoltaic cell and optoelectronics. In this work, we employed MoS2 as the top electrode for ferroelectric tunnel junctions, which are potentially attractive data storage elements in future. We have demonstrated the successful polarization switching of the ferroelectric tunnel barrier via applying electric field to the MoS2 top electrode. The switching depends on a variety of parameters including the electric filed polarity, pulse duration and magnitude, film thickness, as well as illumination. The multiple states of tunneling electroresistance can be tuned by manipulation these parameters.

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