Evaluating Chromia as a Gate Dielectric and Characterization of Epitaxial Chromia Films

  • Authors:
    Chun Pui Kwan (Univ. at Buffalo), Rui Chen (Univ. at Buffalo), Uttam Singisetti (Univ. at Buffalo), Jonathan Bird (Univ. at Buffalo)
    Publication ID:
    P085507
    Publication Type:
    Poster
    Received Date:
    8-Sep-2015
    Last Edit Date:
    15-Sep-2015
    Research:
    2398.001 (University of Nebraska/Lincoln)

Abstract

We study electrical conduction in high-quality chromia crystals. A crossover is observed between space-charge limited conduction and the Frenkel-Poole mechanism with increasing temperature, with the crossover occurring in the vicinity of the Neel temperature (308 K) of this material. For thin films, we found the resistance of the sample largely depends on the contact area which they are inversely proportional to each other. Our experiments confirm the excellent dielectric properties of chromia, a result that is important for attempts to utilize this material as a "gate" dielectric in future spintronic devices.

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