MoS(2) as the Top Electrode for Ferroelectric Tunnel Junction

  • Authors:
    Tao Li (U Nebraska/Lincoln), Hyungwoo Lee (U of Wisconsin/Madison), Pankaj K. Sharma (U Nebraska/Lincoln), Alexander Sinitskii (U Nebraska/Lincoln), Chang-Beom Eom (U of Wisconsin/Madison), Alexei Gruverman (U Nebraska/Lincoln), Alexey Lipatov (U Nebraska/Lincoln)
    Publication ID:
    P085563
    Publication Type:
    Poster
    Received Date:
    8-Sep-2015
    Last Edit Date:
    16-Sep-2015
    Research:
    2398.002 (University of Nebraska/Lincoln)

Abstract

Unlike graphene, molybdenum disulfide (MoS2) is a 2-dimentional layered semiconductor with non-zero and tunable band gap. Its rich electronic and optical properties promote many applications, such as transistors, photovoltaic cells and optoelectronic devices. In this work, we employed MoS2 as the top electrode for ferroelectric tunnel junctions (FTJ), which are actively investigated for potential applications in nonvolatile memory and logic devices. We have demonstrated the effective polarization control of the ferroelectric layer via MoS2 gating and associated changes in the FTJ resistance. The multiple states of tunneling electroresistance can be tuned by varying the gate voltage magnitude and duration.

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