CVD Growth and Characterization of Single Layer MoS(2) on Patterned Substrates
Two-dimensional transition metal dichalcogenides (TMDs) are promising new materials because of their direct-bandgap and semiconducting capabilities present at the monolayer limit. Through chemical vapor deposition (CVD) I am able to synthesize monolayer MoS(2) onto patterned and non-patterned SiO(2) substrates. This method yields single domain "islands" and continuous films, which range from µm to cm scale growth. Through the use of pillared substrates, the transistor channel-length is defined independent of the lithographic lateral resolution. These CVD growth methods of MoS(2) on the vertical sidewalls of micron- and nano-scale pillars fabricated out of SiO(2) is possible. Optical characterization with Raman and photoluminescence spectroscopy verify single-layer growth of MoS(2) on and off the pillared substrate, leading to the possibility for preliminary transport measurements of pristine MoS(2).
Sunday, Sept. 20, 2015, 8 a.m. — Tuesday, Sept. 22, 2015, 10 p.m. CT
Austin, TX, United States
Technical conference and networking event for SRC members and students.