Report on the Fabrication, Characterization and Demonstration of FE HZO Based NCFETs with Varying FE Thicknesses

  • Authors:
    Suman Datta (Univ. of Notre Dame)
    Publication ID:
    P089929
    Publication Type:
    Deliverable Report
    Received Date:
    12-Dec-2016
    Last Edit Date:
    13-Jan-2017
    Research:
    2657.001 (University of Notre Dame)

Research Report Highlight

Ferro FETs with 10-nm thick ferroelectric HZO gate stack exhibited >kT/q slope in forward sweep and <kT/q slope in reverse sweep. Current focus is on fabricating Ferro FETs with thinner FE gate stack to reduce hysteresis.

Abstract

We fabricated baseline MOSFETs and ferroelectric FETs using a gate-last process flow, and compared their switching characteristics. The baseline MOSFETs with 10nm HfO2 gate dielectrics showed 75mV/dec switching slope as expected, whereas the Ferro FETs with 10nm thick ferroelectric HZO gate stack exhibited >kT/q slope in forward sweep and

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