Report on the Fabrication, Characterization and Demonstration of FE HZO Based NCFETs with Varying FE Thicknesses
Research Report Highlight
Ferro FETs with 10-nm thick ferroelectric HZO gate stack exhibited >kT/q slope in forward sweep and <kT/q slope in reverse sweep. Current focus is on fabricating Ferro FETs with thinner FE gate stack to reduce hysteresis.
We fabricated baseline MOSFETs and ferroelectric FETs using a gate-last process flow, and compared their switching characteristics. The baseline MOSFETs with 10nm HfO2 gate dielectrics showed 75mV/dec switching slope as expected, whereas the Ferro FETs with 10nm thick ferroelectric HZO gate stack exhibited >kT/q slope in forward sweep and