Compact Model Development using Magneto-Electric Magnetic Tunnel Junctions for IoT Applications

  • Authors:
    Nishtha Sharma (UT/Dallas), Andrew Marshall (UT/Dallas), Jonathan Bird (Univ. at Buffalo), Peter Dowben (U Nebraska/Lincoln)
    Publication ID:
    P089971
    Publication Type:
    Paper
    Received Date:
    15-Dec-2016
    Last Edit Date:
    19-Dec-2016
    Research:
    2398.001 (University of Nebraska/Lincoln)

Abstract

The magneto-electric magnetic tunnel junction (ME-MTJ) device set is an advanced, non-volatile beyond CMOS technology capable of complex logic. ME-MTJ utilizes a voltage control magnetism to switch operational states. This results in low voltage, low power operation, with gate level memory. This technology is ideal for designing circuits for Internet of Things(IoT) applications where low standby power is of utmost importance. ME-MTJ can be integrated with CMOS, to offer substantial area and power savings compared to CMOS alone. VerilogA based compact models of the ME-MTJ are here used with the Spectre circuit simulator, to determine performance. Circuit results are shown for the basic ME-MTJ based devices i.e. Buffer/Inverter, Majority gate, XNOR together with validation the technology for larger scale circuit with a 5-bit full adder simulation, expandable to an arbitrary length adder. We have also proposed a 1-bit ME-MTJ based ALU. Results are benchmarked against CMOS. A ME-MTJ based ring oscillator with adder clocking scheme shows that the technology can be used extensively for more complex circuit design.

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