Transient Nature of Negative Capacitance in Ferroelectric Field-Effect Transistors

  • Authors:
    Kwok Ng (SRC), Steven Hillenius (SRC), Alexei Gruverman (U Nebraska/Lincoln)
    Publication ID:
    P090107
    Publication Type:
    Paper
    Received Date:
    16-Jan-2017
    Last Edit Date:
    16-Jan-2017
    Research:
    2398.002 (University of Nebraska/Lincoln)

Abstract

Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper, we discuss the implications of the transient nature of negative capacitance for its practical application. It is suggested that the NC effect needs to be characterized at the proper time scale to identify the type of circuits where functional NC-FETs can be used effectively.

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