Extrinsic Time-dependent Dielectric Breakdown of Low-k Organosilicate Thin Films from Vacuum-ultraviolet Irradiation

  • Authors:
    Xiangyu Guo (U of Wisconsin/Madison), Dongfei Pei (U of Wisconsin/Madison), Huifeng Zheng (U of Wisconsin/Madison), Weiyi Li (U of Wisconsin/Madison), J. Leon Shohet (U of Wisconsin/Madison), Sean King (Intel), Yi-hung Lin (NSRRC, Taiwan), Hok-sum Fung (NSRRC, Taiwan), Cheng-chi Chen (NSRRC, Taiwan), Yoshio Nishi (Stanford)
    Publication ID:
    P090307
    Publication Type:
    Paper
    Received Date:
    12-Feb-2017
    Last Edit Date:
    13-Feb-2017
    Research:
    2359.001 (University of Wisconsin/Madison)

Abstract

In this work, the effect of vacuum ultraviolet (VUV) photon irradiation on the time-dependent dielectric breakdown (TDDB) of low-k organosilicate thin films was investigated, with particular emphasis on extrinsic TDDB (includes Cu migration effects). State-of-the-art low-k a-SiOC:H thin films were utilized because of their relevance as both an interlayer dielectric and as a candidate Cu capping-layer material. Synchrotron radiation was used to mimic VUV photon irradiation from processing plasmas without the presence of charged particles. TDDB characteristic lifetimes of the low-k a-SiOC:H dielectrics, before and after VUV photon exposure, were measured based on a Ti/a-SiOC:H/Cu metal-insulator-metal structure. The deterioration of extrinsic TDDB was observed in the film after exposure to VUV photons with 9 eV energy. The most notable degradation of the dielectric characteristic lifetime was found when the Cu electrode was used as an anode in the sample after 9.0 eV VUV photon exposure (photon fluence is 4.0 x 10(15) photons/cm2). This is believed to be related to the Cu ions created by a VUV photon-assisted reaction. In the presence of an electric field, these Cu ions drift into the low-k dielectric and deteriorate TDDB performance.

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