Extrinsic Time-dependent Dielectric Breakdown of Low-k Organosilicate Thin Films from Vacuum-ultraviolet Irradiation

  • Authors:
    Xiangyu Guo (U of Wisconsin/Madison), Dongfei Pei (U of Wisconsin/Madison), Huifeng Zheng (U of Wisconsin/Madison), Weiyi Li (U of Wisconsin/Madison), J. Leon Shohet (U of Wisconsin/Madison), Sean King (Intel), Yi-hung Lin (NSRRC, Taiwan), Hok-sum Fung (NSRRC, Taiwan), Cheng-chi Chen (NSRRC, Taiwan), Yoshio Nishi (Stanford)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2359.001 (University of Wisconsin/Madison)


In this work, the effect of vacuum ultraviolet (VUV) photon irradiation on the time-dependent dielectric breakdown (TDDB) of low-k organosilicate thin films was investigated, with particular emphasis on extrinsic TDDB (includes Cu migration effects). State-of-the-art low-k a-SiOC:H thin films were utilized because of their relevance as both an interlayer dielectric and as a candidate Cu capping-layer material. Synchrotron radiation was used to mimic VUV photon irradiation from processing plasmas without the presence of charged particles. TDDB characteristic lifetimes of the low-k a-SiOC:H dielectrics, before and after VUV photon exposure, were measured based on a Ti/a-SiOC:H/Cu metal-insulator-metal structure. The deterioration of extrinsic TDDB was observed in the film after exposure to VUV photons with 9 eV energy. The most notable degradation of the dielectric characteristic lifetime was found when the Cu electrode was used as an anode in the sample after 9.0 eV VUV photon exposure (photon fluence is 4.0 x 10(15) photons/cm2). This is believed to be related to the Cu ions created by a VUV photon-assisted reaction. In the presence of an electric field, these Cu ions drift into the low-k dielectric and deteriorate TDDB performance.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.