Voltage-controlled Magnetism: A Route to Ultra-low Power Memory and Logic Devices

  • Authors:
    Christian Binek (U Nebraska/Lincoln), Will Echtenkamp (U Nebraska/Lincoln), Xi He (U Nebraska/Lincoln), Michael Street (U Nebraska/Lincoln), Ather Mahmood (U Nebraska/Lincoln), Junlei Wang (U Nebraska/Lincoln), Kirill Belashchenko (U Nebraska/Lincoln), Peter Dowben (U Nebraska/Lincoln)
    Publication ID:
    P090351
    Publication Type:
    Presentation
    Received Date:
    16-Feb-2017
    Last Edit Date:
    21-Feb-2017
    Research:
    2398.001 (University of Nebraska/Lincoln)

Abstract

This presentation was given at the 4th US Government working group on magnetic tunnel junctions on October 6-7, 2016, University of Maryland in College Park, MD.

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