Ultrathin, Wafer-scale Hexagonal Boron Nitride on Dielectric Surfaces by Diffusion and Segregation Mechanism

  • Authors:
    Sushant S. Sonde (UT/Austin), Andrei Dolocan (UT/Austin), Ning Lu (UT/Dallas), Chris M. Corbet (UT/Austin), Moon Kim (UT/Dallas), Emanuel Tutuc (UT/Austin), Sanjay K. Banerjee (UT/Austin), Luigi Colombo (TI)
    Publication ID:
    P090372
    Publication Type:
    Paper
    Received Date:
    21-Feb-2017
    Last Edit Date:
    22-Feb-2017
    Research:
    2400.001 (University of Texas/Austin)

Abstract

Chemical vapor deposition of two-dimensional (2D) hexagonal boron nitride (h-BN) is at the center of numerous studies for its applications in novel electronic devices. However, a clear understanding of the growth mechanism is lacking for its wider industrial adoption on technologically relevant substrates such as SiO2. Here, we demonstrate a controllable growth method of thin, wafer scale h-BN films on arbitrary substrates. Such growth is achieved by diffusion and surface segregation (D-SS) of boron (B) and nitrogen (N) in Ni and Co thin films on SiO2/Si substrates after exposure to diborane and ammonia precursors at high temperature. The resulting D-SS h-BN films exhibit excellent electrical insulating behavior with an optical bandgap of about 5.8 eV. Moreover, graphene-on-h-BN field effect transistors using the as-grown D-SS h-BN films show a mobility of about 6,000 cm2/Vs at room temperature.

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