Carbon-Assisted Chemical Vapor Deposition of Hexagonal Boron Nitride

  • Authors:
    Ariel Ismach (UT/Austin), Harry Chou (UT/Austin), Patrick Mende (Carnegie Mellon Univ.), Andrei Dolocan (UT/Austin), Rafik Addou (UT/Dallas), Shaul Aloni (LBNL), Robert M. Wallace (UT/Dallas), Randall M. Feenstra (Carnegie Mellon Univ.), Rodney S. Ruoff (UNIST), Luigi Colombo (TI)
    Publication ID:
    P090449
    Publication Type:
    Paper
    Received Date:
    1-Mar-2017
    Last Edit Date:
    1-Mar-2017
    Research:
    2383.001 (University of Texas/Dallas)
    2400.009 (University of Texas/Austin)

Abstract

We show that in a low-pressure chemical vapor deposition (CVD) system, the residual oxygen and/or air play a crucial role in the mechanism of the growth of hexagonal boron nitride (h-BN) films on Ni foil ‘enclosures’. h-BN films grow on the Ni foil surface via the formation of an intermediate boric-oxide (BOx) phase followed by a thermal reduction of the BOx by a carbon source (either amorphous carbon powder or methane), leading to the formation of single- and bi-layer h-BN. Low energy electron micros- copy (LEEM) and diffraction (LEED) were used to map the number of layers over large areas, and Raman spectroscopy, time-of- flight secondary ion mass spectroscopy (ToF-SIMS), x-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the structure and physical quality of the ultra-thin h-BN film. The growth procedure reported here leads to a better understanding and control of the synthesis of ultra-thin h-BN films by carbothermal reduction.

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