Negative Capacitance Effect

  • Authors:
    Sayeef Salahuddin (UC/Berkeley)
    Publication ID:
    P090458
    Publication Type:
    e-Workshop
    Received Date:
    3-Mar-2017
    Last Edit Date:
    3-Mar-2017
    Research:
    2383.003 (University of Notre Dame)
    Replay:
    62 minutes
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Abstract

In the last couple of years many groups have independently demonstrated the negative capacitance effect and <60 nV/decade subthreshold swing in transistors. In this talk I will discuss our most recent results and understanding of the negative capacitance effect that were developed in part by our research in the STARNET/LEAST center. Specifically, I shall discuss questions that has often come up such as: (i) effect of domains (ii) effect of domain nucleation vs domain growth (iii) differential vs absolute voltage amplification (iii) DC vs time-dependent behavior and (iV) speed. I shall also discuss how age-old approximations in the standard form of Landau-Khalatnikov equations, conventionally used in the analysis of negative capacitance effect, have led to certain confusions.

Past Events

  Event Summary
22 February 2017
STARnet
STARnet
Negative Capacitance Effect
Wednesday, Feb. 22, 2017, 2 p.m.–3 p.m. ET
Notre Dame, IN, United States

E-Workshop

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450