Negative Capacitance Effect

  • Authors:
    Sayeef Salahuddin (UC/Berkeley)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2383.003 (University of Notre Dame)
    62 minutes
    Sign in to see the View Replay button »


In the last couple of years many groups have independently demonstrated the negative capacitance effect and <60 nV/decade subthreshold swing in transistors. In this talk I will discuss our most recent results and understanding of the negative capacitance effect that were developed in part by our research in the STARNET/LEAST center. Specifically, I shall discuss questions that has often come up such as: (i) effect of domains (ii) effect of domain nucleation vs domain growth (iii) differential vs absolute voltage amplification (iii) DC vs time-dependent behavior and (iV) speed. I shall also discuss how age-old approximations in the standard form of Landau-Khalatnikov equations, conventionally used in the analysis of negative capacitance effect, have led to certain confusions.

Past Events

  Event Summary
22 February 2017
Negative Capacitance Effect
Wednesday, Feb. 22, 2017, 2 p.m.–3 p.m. ET
Notre Dame, IN, United States


4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.