A Random Number Generator based on Insulator-to-Metal Electronic Phase Transitions

  • Authors:
    Matthew J. Jerry (Univ. of Notre Dame), Abhinav Parihar (Georgia Tech), Arijit Raychowdhury (Georgia Tech), Suman Datta (Univ. of Notre Dame)
    Publication ID:
    P090672
    Publication Type:
    Paper
    Received Date:
    7-Apr-2017
    Last Edit Date:
    7-Apr-2017
    Research:
    2698.001 (University of Notre Dame)

Abstract

Random number generators (RNG) are a fundamental hardware component in modern cryptographic systems. The generation of random numbers can be subdivided into two classes, pseudo-RNGs and hardware RNGs. In pseudo-RNGs software algorithms are implemented on deterministic hardware but are dependent on a set of initial values or “seed”, which reduces the security. In contrast, hardware RNGs generate random numbers from a naturally occurring physical phenomenon, such as thermal noise. However, implementations often suffer from large silicon footprints due to the need to create resistor-amplifier-ADC chains or bias removal circuits. In this work, we experimentally demonstrate a compact and scalable 1T1R based RNG by harnessing the inherent stochasticity in the insulator-to-metal phase transition (IMT) in vanadium dioxide (VO2).

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