Non-volatile Memory and Information Storage

  • Authors:
    Andrew D. Kent (NYU)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2399.002 (SUNY Polytechnic Institute)
    2399.003 (SUNY Polytechnic Institute)


This paper reviews the development status of spin-transfer torque magnetic random access memory (STT-MRAM) and experimental studies of nanosecond pulse switching of perpendicular magnetic tunnel junction nanopillars.

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