Realization of Topological Behavior in Sn-based Materials

  • Authors:
    Stephen D. Albright (Yale)
    Publication ID:
    P090722
    Publication Type:
    e-Workshop
    Received Date:
    19-Apr-2017
    Last Edit Date:
    19-Apr-2017
    Research:
    2382.002 (University of California/Irvine)
    Replay:
    38 minutes
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Abstract

Topological insulators (TIs), bulk insulators with symmetry-protected surface and edge states that exhibit unique spin and conductivity properties, have potential applications in future electronic devices. TIs of the (Bi,Sb)2(Te,Se)3 family have been extensively studied, and there has been recent interest in Sn-based TIs. Our group has focused on the experimental realization of two Sn-based TIs: stanene, a two-dimensional monolayer of Sn similar to graphene, and SnTe, a three-dimensional crystal whose topological states are protected by crystalline symmetry. For both materials, structure plays an important role in their topological properties. In this talk I will discuss the growth of monolayer stanene on Bi2Te3 and the use of synchrotron x-ray diffraction to distinguish between the planar and buckled polymorphs of monolayer Sn. I will also show how the topological surface states of thin film SnTe can be protected at the interface between SnTe and SrTiO3. This strategy for using topological surface states in a device avoids contamination by air exposure and avoids Fermi level pinning observed for bare SnTe surfaces.

Past Events

  Event Summary
19 April 2017
STARnet
STARnet
Realization of Topological Behavior in Sn-based Materials
Wednesday, April 19, 2017, 11 a.m.–noon PT
Los Angeles, CA, United States

E-Workshop

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

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