Polyoxometalate Hybrid Nano-Building Blocks for Extreme Ultra-violet Photoresists
Extreme Ultra-violet Lithography (EUVL), regardless of some setbacks, has continued its push as a viable option for next generation nodes of photolithography. Utilizing a 13.5nm wavelength, EUV is still showing promise as a natural progression of optical lithography in the semiconductor industry. Despite this upside, EUVL also has its drawbacks, one of which includes the development of a suitable photoresist material. The development and characterization of polyoxometalate (POM) hybrid nano-building blocks (NBBs) shows great potential as a candidate for improving the patterning of semiconductor devices using EUVL. Octamolybdate macromolecules were synthesized using literature methods. These primary materials were modified for improvements using a combination of physical mixtures with photoacids (resist sensitivity) and epoxide (mechanical stability). In addition, tellurium atoms (EUV absorption) were incorporated chemically and will be explored with similar mixtures to better understand the relatively limited knowledge of POM materials as functional photoresists and dielectric materials.