Low-Resistivity Metal Interconnects <10 nm
This workshop will discuss the search for the most conductive metals to replace Cu for narrow interconnect lines, focusing on three key aspects. (i) Electron surface scattering: In situ transport measurements on epitaxial Cu(001) layers with various monolayer cap-layers demonstrate specular surface scattering when the local surface density of states at the Fermi level is negligible, resulting in a considerable copper resistivity reduction. (ii) Alternative metals: The resistivity scaling at reduced dimensions is measured using epitaxial metal layers (Cu, Ag, W, Ta, Ru, Mo, Ni) and directly compared to results from classical transport models using first-principles electronic structure calculations. Multiple elemental metals are predicted to be more conductive than Cu for polycrystalline lines <10nm. (iii) Confined transport model: First-principles non-equilibrium transport simulations in combination with measurements of the resistivity vs roughness and dimensionality are used to develop a new model that accurately accounts for electron surface scattering in quantum-confined 1-D and 2-D conductors. This model will replace semiclassical models that fail to predict the resistivity <10 nm.
|Low-Resistivity Metal Interconnects <10 nm|
Wednesday, May 3, 2017, 11 a.m.–noon PT
Los Angeles, CA, United States