Magneto-Electric Magnetic Tunnel Junction Based Circuit Options

  • Authors:
    Jonathan Bird (Univ. at Buffalo), Nishtha Sharma (UT/Dallas), Andrew Marshall (UT/Dallas), Peter Dowben (U Nebraska/Lincoln)
    Publication ID:
    P090881
    Publication Type:
    Paper
    Received Date:
    10-May-2017
    Last Edit Date:
    12-May-2017
    Research:
    2398.001 (University of Nebraska/Lincoln)

Abstract

The Magneto-Electric Magnetic Tunnel Junction (ME-MTJ) is a voltage controlled beyond CMOS device based on the principle of magneto-electric antiferromagnetic (ME-AFM) exchange biasing of chromia (Cr2O3) and Tunneling Magneto-resistance (TMR) of a Magnetic Tunnel Junction (MTJ) (fixed/free ferromagnet (FM) stack). These devices have previously been demonstrated for implementation of digital logic and memory applications. We here demonstrate for the first time their analog capabilities with a variety of analog functions adapted specifically to the specific characteristics of ME-MTJ – based devices.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.