Magneto-Electric Magnetic Tunnel Junction as Process Adder for Non-Volatile Memory Applications

  • Authors:
    Nishtha Sharma (UT/Dallas), Andrew Marshall (UT/Dallas), Jonathan Bird (Univ. at Buffalo), Peter Dowben (U Nebraska/Lincoln)
    Publication ID:
    P090893
    Publication Type:
    Presentation
    Received Date:
    12-May-2017
    Last Edit Date:
    12-May-2017
    Research:
    2398.001 (University of Nebraska/Lincoln)

Abstract

Magneto-electric magnetic tunnel junction devices (ME-MTJ) show promise for beyond CMOS memory applications. The advantages of these devices include non-volatility, easy integration with CMOS process, high-density, low power consumption and high-speed operation. We discuss circuitry that allows the ME-MTJ devices to interface with SRAM memory, to create non-volatile storage elements. Various layouts are suggested for the devices, showing flexible integration in an efficient manner.

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