Report on the Development of ALD Ultrathin High-k on 2D Materials, Such as HfO2, LaAlO3, LaLuO3, or LaYO3, using Buried Gate Structure and Eventually Top Gate Structure

  • Authors:
    Peide Ye (Purdue)
    Publication ID:
    Publication Type:
    Deliverable Report
    Received Date:
    Last Edit Date:
    2656.001 (Purdue University)


We report on the progress on (1) identification of narrow bandgap high mobility 2D Te material (2) dielectric integration on 2D materials in general and (3) doping techniques on Te.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.