Report on the Development of ALD Ultrathin High-k on 2D Materials, Such as HfO2, LaAlO3, LaLuO3, or LaYO3, using Buried Gate Structure and Eventually Top Gate Structure

  • Authors:
    Peide Ye (Purdue)
    Publication ID:
    P090902
    Publication Type:
    Deliverable Report
    Received Date:
    12-May-2017
    Last Edit Date:
    15-May-2017
    Research:
    2656.001 (Purdue University)

Abstract

We report on the progress on (1) identification of narrow bandgap high mobility 2D Te material (2) dielectric integration on 2D materials in general and (3) doping techniques on Te.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450