Structure of Graphene/SiC(000-1) Interfaces Prepared in Disilane

  • Authors:
    Jun Li (Carnegie Mellon Univ.), Guowei He (Carnegie Mellon Univ.), Michael Widom (Carnegie Mellon Univ.), Lydia Nemec (Fritz-Haber-Institut der Max-Planck-Gesellschaft), Patrick Rinke (Fritz-Haber-Institut der Max-Planck-Gesellschaft), Matthias Scheffler (Fritz-Haber-Institut der Max-Planck-Gesellschaft), Randall M. Feenstra (Carnegie Mellon Univ.), Volker Blum (Duke)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2383.001 (University of Texas/Dallas)


Epitaxial graphene grown on SiC can serve as a useful layer for forming interconnects and contacts to tunneling field-effect transistors formed from two-dimensional materials. In this work, the structure of graphene formed on the SiC(000-1) surface, the so-called C-face of the SiC{0001} surface, is studied. Unlike graphene formation on the SiC(0001) surface (the Si-face), where the situation is quite well understood, formation of graphene on the C-face is much more complex. In particular, a recent report of graphene formation in a disilane environment described the presence of a (√43×√43)-R7.6 interface reconstruction, the detailed structure of which is not known. The graphene that formed in that case had significantly larger domain size than that formed under typical high-vacuum conditions, but nevertheless its quality was not as high as that found for growth under confinement-controlled sublimation conditions. The purpose of the present study is to identify the structure of the (√43×√43)-R7.6 reconstruction, in an effort to elucidate the formation mechanisms for C-face graphene.

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