III-V Vertical Nanowire MOSFETs with Band Engineering in the Transport Direction
We demonstrate a new technique to etch III-V vertical nanowires (VNW) with sub-10 nm diameter and high yield. We also show InGaAs VNW MOSFETs with record electrical characteristics in terms of ON-state behavior (transconductance) and OFF-state characteristics (subthreshold swing). Finally, we will present InGaAs/InAs VNW TFETs with subthermal subthreshold behavior over two orders of magnitude of current.
|Logic and Memory Devices Review|
Wednesday, May 24, 2017, 8 a.m.–5 p.m. ET
Cambridge, MA, United States