Back-Gate-Bias Effects and S-parameter Modeling for FDSOI MOSFETs

  • Authors:
    Pragya Kushwaha (UC/Berkeley), Yen-Kai Lin (UC/Berkeley), Harshit Agarwal (UC/Berkeley), Juan P. Duarte (UC/Berkeley), Huan-Lin Chang (UC/Berkeley), Chenming Hu (UC/Berkeley)
    Publication ID:
    P090928
    Publication Type:
    Poster
    Received Date:
    17-May-2017
    Last Edit Date:
    18-May-2017
    Research:
    2671.001 (University of California/Berkeley)

Abstract

BSIM-IMG(Independent Multi-Gate) is the first industry standard compact model for Ultra-Thin Body (UTB) and BOX SOI transistors (UTBB). It allows different front/back gate voltages, work functions, dielectric thicknesses, and dielectric constants. In this poster, we will present the recent enhancements done in BSIM-IMG model.

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