Back-Gate-Bias Effects and S-parameter Modeling for FDSOI MOSFETs
BSIM-IMG(Independent Multi-Gate) is the first industry standard compact model for Ultra-Thin Body (UTB) and BOX SOI transistors (UTBB). It allows different front/back gate voltages, work functions, dielectric thicknesses, and dielectric constants. In this poster, we will present the recent enhancements done in BSIM-IMG model.
|Logic and Memory Devices Review|
Wednesday, May 24, 2017, 8 a.m.–5 p.m. ET
Cambridge, MA, United States