GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope

  • Authors:
    Patrick Fay (Univ. of Notre Dame), Wenjun Li (Univ. of Notre Dame), Matt D. Brubaker (NIST), Bryan T. Spann (NIST), Kris A. Bertness (NIST)
    Publication ID:
    P090941
    Publication Type:
    Paper
    Received Date:
    19-May-2017
    Last Edit Date:
    22-May-2017
    Research:
    2383.002 (Pennsylvania State University)

Abstract

Top-gated GaN nanowire MOSFETs using Al2O3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 98 μA/μm (normalized by diameter), on/off ratio over 108, and an intrinsic transconductance of 155 μS/μm. The field-effect channel electron mobility is extracted to be 37 cm2/V-s at 300 K, which is primarily limited by acoustic phonon and impurity scattering. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.

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