2D Semiconductor Pathfinding - From Materials Growth to VLSI Transistors
For 2D materials to transition to industry, exfoliated materials must be superceded by semiconductor growth approaches that are compatible with VLSI process technology. This talk will outline progress in the development of synthesized WSe2 for both tunnel field-effect transistors (TFETs) and FETs. Two growth approaches, metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), are being explored. Two growth surfaces are being utilized: Al2O3 sapphire and Al2O3 grown by atomic layer deposition on Si substrates. Top gated and back gated transistor processes and characterization will be presented and benchmarked against results on exfoliated transistors to show paths forward for this technology.
|2D Semiconductor Pathfinding - From Materials Growth to VLSI Transistors|
Wednesday, May 24, 2017, 2 p.m.–3 p.m. ET
Notre Dame, IN, United States