2D Semiconductor Pathfinding - From Materials Growth to VLSI Transistors

  • Authors:
    Alan C. Seabaugh (Univ. of Notre Dame), Christopher Hinkle (UT/Dallas), Joshua A. Robinson (Penn State)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2383.001 (University of Texas/Dallas)
    2383.003 (University of Notre Dame)
    61 minutes
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For 2D materials to transition to industry, exfoliated materials must be superceded by semiconductor growth approaches that are compatible with VLSI process technology. This talk will outline progress in the development of synthesized WSe2 for both tunnel field-effect transistors (TFETs) and FETs. Two growth approaches, metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), are being explored. Two growth surfaces are being utilized: Al2O3 sapphire and Al2O3 grown by atomic layer deposition on Si substrates. Top gated and back gated transistor processes and characterization will be presented and benchmarked against results on exfoliated transistors to show paths forward for this technology.

Past Events

  Event Summary
24 May 2017
2D Semiconductor Pathfinding - From Materials Growth to VLSI Transistors
Wednesday, May 24, 2017, 2 p.m.–3 p.m. ET
Notre Dame, IN, United States


4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

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