Room Temperature Spin-orbit Torque Switching Induced by a Topological Insulator

  • Authors:
    Jiahao Han (MIT), Saima A. Siddiqui (MIT), Joseph Finley (MIT), Nitin Samarth (Penn State), Luqiao Liu (MIT)
    Publication ID:
    P090984
    Publication Type:
    Paper
    Received Date:
    25-May-2017
    Last Edit Date:
    25-May-2017
    Research:
    2700.001 (Mass. Institute of Technology)

Abstract

Recent studies on the magneto-transport properties of topological insulators (TI)1–7 have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly, the strongly spin-moment coupled electronic states have been extensively pursued to realize efficient spin-orbit torque (SOT) switching. However, so far current-induced magnetic switching with TI has only been observed at cryogenic temperatures. It remains a controversial issue whether the topologically protected electronic states in TI could benefit spintronic applications at room temperature. In this work, we report full SOT switching in a TI/ferromagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The low switching current density provides definitive proof of the high SOT efficiency from TI. Furthermore, the effective spin Hall angle of TI is determined to be several times larger than commonly used heavy metals. Our results demonstrate the robustness of TI as an SOT switching material and provide a direct avenue towards applicable TI-based spintronic devices.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.