GaN-Channel Nanowire MOSFETs for Low Power Applications

  • Authors:
    Wenjun Li (Univ. of Notre Dame), M Brubaker (NIST), B. Spann (NIST), K. Bertness (NIST), Patrick Fay (Univ. of Notre Dame)
    Publication ID:
    P091066
    Publication Type:
    Paper
    Received Date:
    2-Jun-2017
    Last Edit Date:
    5-Jun-2017
    Research:
    2383.002 (Pennsylvania State University)

Abstract

This paper is being submitted by Prof. Fay to the Topical Workshop on Heterostructure Materials; in Kirishima, Japan.

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