Non-volatile Memory with Zero Magnetic Moment

  • Authors:
    Luqiao Liu (MIT)
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    Publication Type:
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    Last Edit Date:
    2700.002 (Mass. Institute of Technology)
    59 minutes
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There has been great interest recently in using antiferromagnetic materials (AFM) as opposed to FM to store information. Compared with FM, AFM exhibit fast dynamics as well as robust protection against external magnetic fields, which can enable spintronic devices with fast speed and high density. However, the cancellation of total magnetic moment and the disappearance of magnetoresistance effect in AFM pose great difficulties on developing spintronic devices out of them. In this talk, I will discuss our recent study on rare earth based ferrimagnetic alloys which has antiferromagnetically coupled sublattices, net zero magnetic moment and electrically controllable magnetic state. Particularly, I will show that the inequality of the two sub-lattices provides finite electrical signal for convenient reading mechanism and spin orbit torque (SOT) induces magnetic switching allows for efficient writing mechanism[1]. Moreover, I will also discuss our recent experiment work which integrates those compensated ferrimagnet with topological insulators, where the efficiency of spin orbit torque switching can are significantly improved [2].

[1] J. Finley, L. Q. Liu, “Spin-Orbit-Torque Efficiency in Compensated Ferrimagnetic Cobalt-Terbium Alloys”, Physical Review Applied, 6, 054001 (2016)
[2] J. Han, A. Richardella, S. S. Siddiqui, J. Finley, N. Samarth, and L. Liu. Room temperature spin-orbit torque switching induced by a topological insulator. Preprint at arXiv: 1703.07470 (2017).

Past Events

  Event Summary
6 June 2017
Non-volatile Memory with Zero Magnetic Moment
Tuesday, June 6, 2017, 4 p.m.–5:30 p.m. ET
Durham, NC, United States


4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

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