Integration of Cu/Graphene Hybrid Interconnects with Damascene Process
This task involves the exploration of Cu/graphene-hybrid interconnect with damascene structures. Graphene growth temperature was lowered to 400C using Co as sacrificial layer. The thickness of graphene was scaled down to 2-3 nm with full coverage over large area substrate. The as-synthesized 2-3 nm graphene was confirmed to be an effective Cu diffusion barrier by time-dependent dielectric breakdown (TDDB) measurements. In addition, the uniform graphene growth in trench structures was demonstrated.
|Nanomanufacturing Materials and Processes (NMP) Review|
Tuesday, June 27, 2017, 8 a.m. — Wednesday, June 28, 2017, 5 p.m. PT
Stanford, CA, United States