Integration of Cu/Graphene Hybrid Interconnects with Damascene Process

  • Authors:
    Shengjiao Zhang (Purdue), Chun-Li Lo (Purdue), Zhihong Chen (Purdue)
    Publication ID:
    Publication Type:
    Annual Review
    Received Date:
    Last Edit Date:
    2658.001 (Purdue University)


This task involves the exploration of Cu/graphene-hybrid interconnect with damascene structures. Graphene growth temperature was lowered to 400C using Co as sacrificial layer. The thickness of graphene was scaled down to 2-3 nm with full coverage over large area substrate. The as-synthesized 2-3 nm graphene was confirmed to be an effective Cu diffusion barrier by time-dependent dielectric breakdown (TDDB) measurements. In addition, the uniform graphene growth in trench structures was demonstrated.

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27–28 June 2017
Nanomanufacturing Materials and Processes (NMP) Review
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