Integration of Cu/Graphene Hybrid Interconnects with Damascene Process

  • Authors:
    Shengjiao Zhang (Purdue), Chun-Li Lo (Purdue), Zhihong Chen (Purdue)
    Publication ID:
    P091131
    Publication Type:
    Annual Review
    Received Date:
    19-Jun-2017
    Last Edit Date:
    28-Jun-2017
    Research:
    2658.001 (Purdue University)

Abstract

This task involves the exploration of Cu/graphene-hybrid interconnect with damascene structures. Graphene growth temperature was lowered to 400C using Co as sacrificial layer. The thickness of graphene was scaled down to 2-3 nm with full coverage over large area substrate. The as-synthesized 2-3 nm graphene was confirmed to be an effective Cu diffusion barrier by time-dependent dielectric breakdown (TDDB) measurements. In addition, the uniform graphene growth in trench structures was demonstrated.

Past Events

  Event Summary
27–28 June 2017
GRC
GRC
Nanomanufacturing Materials and Processes (NMP) Review
Tuesday, June 27, 2017, 8 a.m. — Wednesday, June 28, 2017, 5 p.m. PT
Stanford, CA, United States

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