Defect Passivation of Transition Metal Dichalcogenides via a Charge Transfer Van-der-Waals Interface

  • Authors:
    Jun Hong Park (UC/San Diego), Atresh Sanne (UT/Austin), Yuzheng Guo (Swansea Univ.), Matin Amani (UC/Berkeley), Kehao Zhang (Penn State), Hema Chandra Prakash Movva (UT/Austin), Joshua A. Robinson (Penn State), Ali Javey (UC/Berkeley), John Robertson (Univ. of Cambridge), Sanjay K. Banerjee (UT/Austin), Andrew Kummel (UC/San Diego)
    Publication ID:
    P091645
    Publication Type:
    Paper
    Received Date:
    8-Aug-2017
    Last Edit Date:
    1-Dec-2017
    Research:
    2383.001 (University of Texas/Dallas)
    2400.013 (University of Texas/Austin)

Abstract

Integration of transition metal dichalcogenides (TMDs) into next generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. Here, the formation of an organic-inorganic van-der-Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of a formation of a van-der-Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, while degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction allowing sufficient charge transfer to remove defects states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a Van der Waals bonded complex.

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