Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

  • Authors:
    Yu-Chuan Lin (Penn State), Bhakti Jariwala (Penn State), Brian M. Bersch (Penn State), Ke Xu (Univ. of Pittsburgh), Yifan Nie (UT/Dallas), Baoming Wang (Penn State), Sarah M. Eichfeld (Penn State), Xiaotian Zhang (Penn State), Tanushree Choudhury (Penn State), Yi Pan (Paul-Drude-Institut für Festkörperelektronik), Rafik Addou (UT/Dallas), Christopher M. Smyth (UT/Dallas), Jun Li (Carnegie Mellon Univ.), Kehao Zhang (Penn State), Md Haque (Penn State), Stefan Foelsch (Paul-Drude-Institut für Festkörperelektronik), Randall M. Feenstra (Carnegie Mellon Univ.), Robert M. Wallace (UT/Dallas), Kyeongjae Cho (UT/Dallas), Susan K. Fullerton (Univ. of Pittsburgh), Joan Redwing (Penn State), Joshua A. Robinson (Penn State)
    Publication ID:
    P091667
    Publication Type:
    Paper
    Received Date:
    10-Aug-2017
    Last Edit Date:
    19-Feb-2018
    Research:
    2383.001 (University of Texas/Dallas)

Abstract

Atomically thin transition metal dichalcogenides (TMDs) are of interest for next generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (~107), high current density (1-10 μA·μm-1) and good FET mobility (~ 30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the substrate and 2D/3D interface as leading factors in electronic performance.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.