Nonvolatile Lookup Table Design Based on Ferroelectric Field-Effect Transistors

  • Authors:
    Xiaoming Chen (Univ. of Notre Dame), Michael T. Niemier (Univ. of Notre Dame), Xiaobo Sharon Hu (Univ. of Notre Dame)
    Publication ID:
    P092801
    Publication Type:
    Paper
    Received Date:
    6-Nov-2017
    Last Edit Date:
    12-Feb-2018
    Research:
    2383.004 (Pennsylvania State University)

Abstract

As a nonvolatile (NV) device, ferroelectric field-effect transistors (FeFETs) have the potential to reduced power and area by integrating NV storage elements into logic. In this paper, we exploit FeFET nonvolatility to build lookup tables (LUTs) (which have obvious utility in field-programmable gate arrays, etc.). With nonvolatility, a single FeFET can be used as a storage cell in an LUT, which can help reduce both power and area. We design both static and dynamic logic style LUTs. Read and write schemes are also designed for the proposed LUTs. Evaluation results show that our LUTs outperform both conventional static random-access memory based LUTs as well as other NV LUTs in term of area-power-delay product.

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