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A co-optimization of DC-DC converters, decap, and LDOs in a power delivery network gives 40% area savings.
ICSS Featured Publication: Report on the Design Trade-offs Between Active Voltage Regulation and Passive Capacitive Decoupling
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New hybrid analog machine learning technique shows 10x improvement in verification time for complex circuits.
CADTS Featured Publication: Demonstration of Analog Verification using Large Design Examples
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SIA's 36th Annual Award Dinner & Post Party
The event that brings together the semiconductor industry leaders for networking and insights into the future of the industry—the 2013 SIA Annual Award Dinner and Post Party on Thursday, November 7, 2013 in San Jose, CA. To register ...
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Advancing Resistive Memory to Improve Portable Electronics
Function Accelerated nanoMaterials Engineering (FAME) center researchers develop novel way to build resistive memory devices that could become the storage part of the next generation of smart phones and tablets. Resistive memory usually has a metal-oxide-metal structure in connection with a selector device. The UC Riverside group has demonstrated a novel alternative way, by forming self-assembled zinc oxide nano-islands on silicon. Using a conductive atomic force microscope, the researchers observed three operation modes from the same device structure, essentially eliminating the need for a separate selector device.
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Professor Binek Organizes Symposium to be Included in the 58th MMM Conference
Professor Christian Binek has organized the symposium entitled “Electric field control of magnetic properties” which will be part of the 58th MMM conference in Denver.
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Prof. Margaret Martonosi Honored with Prestigious Award for Women in Tech
C-FAR Principal Investigator Margaret Martonosi was chosen to receive the Anita Borg Award for Technical Leadership.
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TerraSwarm Proposes First International Workshop on the Swarm at the Edge of the Cloud
The TerraSwarm team proposed to organize the First International Workshop on the Swarm at the Edge of the Cloud, to be held September 29, 2013, in Montreal, Canada, as part of the suite of international conferences at ESWeek. The proposal was accepted, a call for abstracts was issued, 25 submissions were received, and a program was formed.
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First Demonstration of MoSe2 Layer Growth by Molecular Beam Epitaxy Achieved at Notre Dame
Growth of crystalline MoSe2 of multiple layers has been demonstrated by the researchers at Notre Dame using molecular beam epitaxy for the first time.
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SRC Researchers at Stanford Build a Working Carbon Nanotube Computer
A group of Stanford researchers has moved a step closer to answering the question of what happens when silicon, the standard material in today’s microelectronic circuits, reaches its fundamental limits for use in increasingly small transistors.
SRC In The News
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DARPA Adds $15.5 Million to Help Take Semiconductors Beyond Moore’s Law
DARPA and SRC teamed to form Starnet, a nationwide network of university and research partners designing future semiconductor technology
SRC In The News
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Silicon nanopillar anodes show promising cycling and capacity for use in high areal capacity microbatteries.
NMS Featured Publication: Performance Parameters of Nanostructured Thin Film Silicon Anodes for Li-ion Microbatteries
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Novel microfluidic cooling shows 5X improvement over air-cooling, using 37% less power than conventional microfluidic cooling.
IPS Featured Publication: Report on the 3D IC Testbed to Evaluate Junction Temperature with Air Cooling
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Prototype ring amplifier based ADC achieves 12.3b ENOB, 75.9 dB SNDR, 2.96 mW, and 29 fJ/conversion step in 180 nm CMOS.
ICSS Featured Publication: Report on the Prototype IC of All Ringamp ADC
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BCP anneal using solvent vapor exposure followed by thermal cycle shown to produce well-ordered microdomains.
NMS Featured Publication: Report Focusing on Solvent Anneal Modeling and Line/Space and Gridded Hole Pattern Demonstrations
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Sub-20 nm metal-semiconductor contact was modeled to have unconventional I-V and a tunneling FET was proposed.
DS Featured Publication: Report on the Theoretical Model, Analytical Analysis for the Structure of Nano Schottky and Nano Metal Tunneling Field Effect Transistor (nano-TFET)
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